High Speed and Highly Efficient Si Optical Modulator with Strained SiGe Layer

被引：0
|
作者：
Fujikata, Junichi [1 ]
Noguchi, Masataka [1 ]
Kim, Younghyun [2 ]
Takahashi, Shigeki [1 ]
Nakamura, Takahiro [1 ]
Takenaka, Mitsuru [2 ]
机构：
[1] PETRA, Tsukuba, Ibaraki 3058569, Japan
[2] Univ Tokyo, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
来源：
2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2015年
关键词：
D O I：
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中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We developed a high speed and high efficiency of depletion type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer which was stacked on the lateral pn junction type Si-MOD. We designed the optimum Si-MOD structure and demonstrated a very high modulation efficiency of 0.81 Vcm, which is one of the most efficient in Si-MODs with a pn Junction. We also demonstrated a high speed operation of 25 Gbps for the Si-MOD at around 1.3 mu m wavelength.
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页码：13 / 14
页数：2
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