High Speed and Highly Efficient Si Optical Modulator with Strained SiGe Layer

被引：0

作者：

Fujikata, Junichi ^{[1
]}

Noguchi, Masataka ^{[1
]}

Kim, Younghyun ^{[2
]}

Takahashi, Shigeki ^{[1
]}

Nakamura, Takahiro ^{[1
]}

Takenaka, Mitsuru ^{[2
]}

机构：

[1] PETRA, Tsukuba, Ibaraki 3058569, Japan

[2] Univ Tokyo, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

来源：

2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2015年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We developed a high speed and high efficiency of depletion type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer which was stacked on the lateral pn junction type Si-MOD. We designed the optimum Si-MOD structure and demonstrated a very high modulation efficiency of 0.81 Vcm, which is one of the most efficient in Si-MODs with a pn Junction. We also demonstrated a high speed operation of 25 Gbps for the Si-MOD at around 1.3 mu m wavelength.

引用

页码：13 / 14

页数：2

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