Clocked dosimeter compatible with digital CMOS technology

被引:0
|
作者
Garcia-Moreno, E [1 ]
Iniguez, B [1 ]
Roca, M [1 ]
Segura, J [1 ]
Isern, E [1 ]
机构
[1] UIB Cra Valldemossa, Dept Phys, Palma 07071, Baleares, Spain
关键词
radiation dosimeter; radiation effects; CMOS technology; digital circuits;
D O I
10.1023/A:1008290024783
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present two versions of a radiation dosimeter, they are CMOS circuits built around a PMOSFET radiation sensor, compatible with standard technology. These dosimeters are intended to be used as built-in sensors in integrated circuits to signal misfunction danger due to radiation exposure, and so they have a binary output which changes its state when the total radiation dose exceeds a prefixed level. The first circuit is an improved version of a previously developed dosimeter which has less power consumption and sharper transfer characteristics. It has been built in ES2 1.0 mu m technology and we present experimental results. The second circuit is under development, it is a clocked dosimeter which samples the dose only during a very short time at each clock period and then remains at rest, to further reduce the power consumption.
引用
收藏
页码:101 / 110
页数:10
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