Clocked dosimeter compatible with digital CMOS technology

被引：0

作者：

Garcia-Moreno, E ^{[1
]}

Iniguez, B ^{[1
]}

Roca, M ^{[1
]}

Segura, J ^{[1
]}

Isern, E ^{[1
]}

机构：

[1] UIB Cra Valldemossa, Dept Phys, Palma 07071, Baleares, Spain

来源：

JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS | 1998年 / 12卷 / 1-2期

关键词：

radiation dosimeter; radiation effects; CMOS technology; digital circuits;

D O I：

10.1023/A:1008290024783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present two versions of a radiation dosimeter, they are CMOS circuits built around a PMOSFET radiation sensor, compatible with standard technology. These dosimeters are intended to be used as built-in sensors in integrated circuits to signal misfunction danger due to radiation exposure, and so they have a binary output which changes its state when the total radiation dose exceeds a prefixed level. The first circuit is an improved version of a previously developed dosimeter which has less power consumption and sharper transfer characteristics. It has been built in ES2 1.0 mu m technology and we present experimental results. The second circuit is under development, it is a clocked dosimeter which samples the dose only during a very short time at each clock period and then remains at rest, to further reduce the power consumption.

引用

页码：101 / 110

页数：10

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