46Gbit/s super-dynamic decision circuit module using InAlAs/InGaAs HEMTs

被引：7
|
作者：
Yoneyama, M
Otsuji, T
Imai, Y
Yamaguchi, S
Enoki, T
Umeda, Y
Hagimoto, K
机构：
[1] NTT, Opt Network Syst Labs, Kanagawa 239, Japan
[2] NTT, Syst Elect Labs, Kanagawa 239, Japan
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 17期
关键词：
high electron mobility transistors; decision circuits;
D O I：
10.1049/el:19971007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors describe a 46Gbit/s super-dynamic type decision circuit module that uses InAlAs/InGaAs HEMTs. Al a data rate of 40Gbit/s, the module shows an input data sensitivity of 104mV(pp) and a crock phase margin of 212 degrees.
引用
收藏
页码：1472 / 1474
页数：3
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