A 2 GHz 2 mW SiGeBiCMOS frequency divider with new latch-based structure

被引：1

作者：

Mazouffre, O ^{[1
]}

Begueret, JB ^{[1
]}

Cathelin, A ^{[1
]}

Belt, D ^{[1
]}

Deval, Y ^{[1
]}

机构：

[1] IXL, Talence, France

来源：

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2003年

关键词：

divider; low-power; UMTS; SiGe technology;

D O I：

10.1109/SMIC.2003.1196675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low power (2 mW) 2 GRz BiCMOS divider dedicated to UNITS is presented. The divider uses a new latch-based structure to obtain a division-by-4 with only two low-speed D-latches. The modulus can be 64 or 72 by the use of phase switching between the different quadrature outputs. The core of the programmable divider fabricated in 0.25 mum STMicroelectronics SiGe BiCMOS technology occupies 0.025 mm(2) and consumes 1.3 mA at 1.5 V. The residual phase noise at the output is less than -100 dBc/Hz at an offset of 1 kHz from the carrier.

引用

页码：84 / 87

页数：4

共 50 条

[1] A new latch-based Threshold Logic family
Padure, M
Cotofana, S
Dan, C
Bodea, M
Vassiliadis, S
2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 2001, : 531 - 534
[2] A low power (45mW/latch) static 150GHz CML divider
Hitko, DA
Hussain, T
Jensen, JF
Royter, Y
Morton, SL
Matthews, DS
Rajavel, RD
Milosavljevic, I
Fields, CH
Thomas, S
Kurdoghlian, A
Lao, ZH
Elliott, K
Sokolich, M
2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY, 2004, : 167 - 170
[3] A 2 mW, 55.8-GHz CMOS Injection-Locked Frequency Divider with 7.1-GHz Locking Range
Hsu, Wei-Lun
Chen, Chang-Zhi
Lin, Yo-Sheng
Chen, Chi-Chen
RWS: 2009 IEEE RADIO AND WIRELESS SYMPOSIUM, 2009, : 555 - 558
[4] A 2 mW, 55.8-GHz CMOS INJECTION-LOCKED FREQUENCY DIVIDER WITH 7.1-GHz LOCKING RANGE
Hsu, Wei-Lun
Chen, Chang-Zhi
Lin, Yo-Sheng
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (03) : 702 - 706
[5] An 11.8-GHz 31-mW CMOS frequency divider
Kurisu, M
Nishikawa, M
Asazawa, H
Tanabe, A
Togo, M
Furukawa, A
1997 SYMPOSIUM ON VLSI CIRCUITS: DIGEST OF TECHNICAL PAPERS, 1997, : 73 - 74
[6] Fast WAT Test Structure for Measuring Vt Variance Based on Latch-based Comparators
Lee, Kao-Chi
Wu, Kai-Chiang
Tsai, Chih-Ying
Chao, Mango Chia-Tso
2017 IEEE 35TH VLSI TEST SYMPOSIUM (VTS), 2017,
[7] A 6.6 mW Inductorless Static 2:1 Frequency Divider Operating up to 60 GHz in 28 nm CMOS
Issakov, V.
Parvais, B.
Vaesen, K.
Vidojkovic, V.
Wambacq, P.
2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013), 2013,
[8] 5GHZ, 12MW NMOS FREQUENCY-DIVIDER
WESTON, HT
HOFSTATTER, EA
ATWOOD, DK
BAYRUNS, RJ
MICHEJDA, JA
PROCANIK, MJ
STANIK, TD
ELECTRONICS LETTERS, 1988, 24 (14) : 834 - 835
[9] Design of 10 GHz, 2.6 mW frequency divider in 0.25 μm CMOS
He, CM
Sun, YH
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1136 - 1138
[10] 1V 2GHz CMOS frequency divider
Yamamoto, K
Norimatsu, T
Fujishima, M
ELECTRONICS LETTERS, 2003, 39 (17) : 1227 - 1228

← 1 2 3 4 5 →