A 2 mW, 55.8-GHz CMOS INJECTION-LOCKED FREQUENCY DIVIDER WITH 7.1-GHz LOCKING RANGE

被引：2

作者：

Hsu, Wei-Lun ^{[1
]}

Chen, Chang-Zhi ^{[1
]}

Lin, Yo-Sheng ^{[1
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 03期

关键词：

CMOS; injection-locked; frequency divider; locking range; low Q-factor; LC-tank;

D O I：

10.1002/mop.24148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power and wide-locking-range 55.8-GHz (V-band) injection-locked frequency-divider (ILFD) using standard 0.13 mu m in CMOS technology is reported. To enhance locking range, a shunt indicator was introduced in the source trade of the cross-coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition, the inductors and capacitors of the LC-tank were implemented by low-Q micro-stripline inductors and high-Q varactors. respectively, to further improve the locking range of the ILFD. The result shows that a wide-locking-range of 7.1 GHz (from 48.7 GHz to 55.8 GHz 13.6%) was achieved. The power consumption of the ILFD is only 2 mW from a 1.1 V power supply. The chip area was only 0.66 X 0.48 mm(2) excluding the test pads. (C) Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 702-706, 2009 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24148

引用

页码：702 / 706

页数：5

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