Deposition of highly c-axis-oriented ScAlN thin films by RF magnetron sputtering using a Sc-Al alloy target

被引：0
|
作者：
Fujii, S. [1 ]
Shimizu, S. [3 ]
Sumisaka, M. [3 ]
Suzuki, Y. [2 ]
Otomo, S. [2 ]
Omori, T. [3 ]
Hashimoto, K. [3 ]
机构：
[1] Chiba Univ, Org Acad Ind Collaborat & Intellectual Property, Chiba, Japan
[2] Furuya Met Co Ltd, R&D Dept, Ibaraki, Japan
[3] Chiba Univ, Grad Sch Engn, Chiba, Japan
来源：
2014 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS) | 2014年
基金：
日本学术振兴会;
关键词：
RF magnetron sputtering; ScAlN; SAW resonator;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. Instead of a co-sputtering system, a conventional RF-magnetron sputtering system was employed using a Sc-Al alloy metal target for deposition of ScAlN thin films. Highly c-axis-oriented ScAlN thin films with a Sc concentration of 32 at.% were obtained. We also demonstrate that a one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K-2 value of 1.7% at 2 GHz, which is four times larger than that of the AlN/Si structure.
引用
收藏
页码：344 / 347
页数：4
相关论文
共 50 条
  • [41] Growth of c-axis oriented aluminum nitride films on GaAs substrates by reactive rf magnetron sputtering
    Cheng, CC
    Chen, YC
    Horng, RC
    Wang, HJ
    Chen, WR
    Lai, EK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06): : 3335 - 3340
  • [42] Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering
    Takenaka, Kosuke
    Satake, Yoshikatsu
    Uchida, Giichiro
    Setsuhara, Yuichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (01)
  • [43] Deposition of Undoped and Al doped ZnO Thin Films using RF Magnetron Sputtering and Study of their Structural, Optical and Electrical Properties
    Venu, Parvathy M.
    Shrisha, B., V
    Balakrishna, K. M.
    Naik, K. Gopalakrishna
    61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, 2017, 1832
  • [44] Low temperature deposition of highly transparent and conducting Al-doped ZnO films by RF magnetron sputtering
    Misra, Prashant
    Ganeshan, Vignesh
    Agrawal, Nikhil
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 725 : 60 - 68
  • [45] Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering
    Nalin Prashant Poddar
    S. K. Mukherjee
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 537 - 548
  • [46] Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering
    Poddar, Nalin Prashant
    Mukherjee, S. K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (01) : 537 - 548
  • [47] Stress effect and evidence of ferroelectric weakening in highly c-axis-oriented PbTiO3 thin films
    W. Ma
    M. Zhang
    T. Yu
    Y. Chen
    N. Ming
    Applied Physics A, 1998, 66 : 345 - 349
  • [48] Stress effect and evidence of ferroelectric weakening in highly c-axis-oriented PbTiO3 thin films
    Ma, W
    Zhang, M
    Yu, T
    Chen, Y
    Ming, N
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (03): : 345 - 349
  • [49] PREPARATION OF C-AXIS-ORIENTED PLT THIN-FILMS BY THE METALORGANIC CHEMICAL VAPOR-DEPOSITION METHOD
    TOMINAGA, K
    MIYAJIMA, M
    SAKASHITA, Y
    SEGAWA, H
    OKADA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1874 - L1876
  • [50] Effect of Deposition Temperature on Microstructure Properties of SiC Thin Films Deposited using RF Magnetron Sputtering
    Mala, S.
    Ashwini, K. B.
    Latha, H. K. E.
    Udayakumar, A.
    INTERNATIONAL CONFERENCE ON TRENDS IN MATERIAL SCIENCE AND INVENTIVE MATERIALS: ICTMIM 2019, 2019, 2105
12345