Deposition of highly c-axis-oriented ScAlN thin films by RF magnetron sputtering using a Sc-Al alloy target

被引：0
|
作者：
Fujii, S. [1 ]
Shimizu, S. [3 ]
Sumisaka, M. [3 ]
Suzuki, Y. [2 ]
Otomo, S. [2 ]
Omori, T. [3 ]
Hashimoto, K. [3 ]
机构：
[1] Chiba Univ, Org Acad Ind Collaborat & Intellectual Property, Chiba, Japan
[2] Furuya Met Co Ltd, R&D Dept, Ibaraki, Japan
[3] Chiba Univ, Grad Sch Engn, Chiba, Japan
来源：
2014 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS) | 2014年
基金：
日本学术振兴会;
关键词：
RF magnetron sputtering; ScAlN; SAW resonator;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. Instead of a co-sputtering system, a conventional RF-magnetron sputtering system was employed using a Sc-Al alloy metal target for deposition of ScAlN thin films. Highly c-axis-oriented ScAlN thin films with a Sc concentration of 32 at.% were obtained. We also demonstrate that a one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K-2 value of 1.7% at 2 GHz, which is four times larger than that of the AlN/Si structure.
引用
收藏
页码：344 / 347
页数：4
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