Stress effect and evidence of ferroelectric weakening in highly c-axis-oriented PbTiO3 thin films

被引:0
|
作者
W. Ma
M. Zhang
T. Yu
Y. Chen
N. Ming
机构
[1] National Laboratory of Molecular and Biomolecular Electronics,
[2] Southeast University,undefined
[3] Nanjing 210096,undefined
[4] P.R. China (Fax: +86-25/7712-719,undefined
[5] E-mail: whma@seu.edu.cn),undefined
[6] National Laboratory of Solid State Microstructures,undefined
[7] Nanjing University,undefined
[8] Nanjing 210093,undefined
[9] P.R. China,undefined
来源
Applied Physics A | 1998年 / 66卷
关键词
PACS: 68.55.J; 78.30.Hv; 77.55.+f;
D O I
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学科分类号
摘要
were successfully grown on Pt-coated SrTiO3 single-crystal substrates by metalorganic chemical vapor deposition (MOCVD) and were investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. The as-deposited thin films were found to be highly (001)-oriented with an average grain size of about 0.3 μm. Both a decrease of the tetragonality and a frequency downshift of the long-wavelength optical phonons were observed and attributed to the effect of compressive stress in the thin films. However, Raman scattering studies estimated a stress value of 2.6 GPa, which is much larger than the value of 0.75 GPa obtained from the XRD analyses. Raman spectroscopic studies also confirmed the grain-size-related disorder feature in the as-grown PbTiO3 thin films. Structural investigations implied the weakening of ferroelectricity in the heteroepitaxial ferroelectric thin films.
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页码:345 / 349
页数:4
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