A Parallel 32x32 Time-To-Digital Converter Array Fabricated in a 130 nm Imaging CMOS Technology

被引:0
|
作者
Gersbach, M. [1 ,5 ]
Maruyama, Y. [5 ]
Labonne, E. [1 ]
Richardson, J. [2 ,3 ]
Walker, R. [3 ]
Grant, L. [2 ]
Henderson, R. [3 ]
Borghetti, F. [4 ]
Stoppa, D. [4 ]
Charbon, E. [1 ,5 ]
机构
[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
[2] ST Microelectroniocs, Edinburgh, Midlothian, Scotland
[3] Univ Edinburgh, Edinburgh, Midlothian, Scotland
[4] Fondaz Bruno Kessler, Trento, Italy
[5] Delft Univ Technol, Delft, Netherlands
来源
2009 PROCEEDINGS OF ESSCIRC | 2009年
关键词
TDC; TDC array; TCSPC; SPAD; FLIM; RESOLUTION; DETECTOR; SENSOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the design and characterization of a 32 x 32 time-to-digital converter (TDC) array implemented in a 130 nm imaging CMOS technology. The 10-bit TDCs exhibit a timing resolution of 119 Ps with a timing uniformity across the entire array of less than 2 LSBs. The differential- and integral non-linearity (DNL and INL) were measured at +/- 0.4 and +/- 1.2 LSBs respectively. The TDC array was fabricated with a pitch of 50 mu m in both directions and with a total TDC area of less than 2000 mu m(2). The characteristics of the array make it an excellent candidate for in-pixel TDC in time-resolved imagers for applications such as 3-D imaging and fluorescence lifetime imaging microscopy (FLIM).
引用
收藏
页码:197 / +
页数:2
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