A 69.5 mW 20 GS/s 6b Time-Interleaved ADC With Embedded Time-to-Digital Calibration in 32 nm CMOS SOI

被引:37
|
作者
Chen, Vanessa H. -C. [1 ]
Pileggi, Lawrence [1 ]
机构
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
关键词
ADC; background calibration; gain calibration; high speed; low power; mismatch; offset calibration; time-inter-leaving; timing skew calibration; REDUNDANCY; OFFSET; DSP; AFE;
D O I
10.1109/JSSC.2014.2364043
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 20 GS/s 6b time-interleaved ADC is implemented in 32 nm CMOS SOI with an embedded time-to-digital converter to sense timing skew, and the randomness of process mismatch is exploited to compensate for the clock misalignment and dynamic offset errors of comparators that occur during high-speed operation. To achieve low-power consumption at high-speed operation with small-size transistors, a low-complexity on-chip calibration reduces gain, offset, and delay mismatches in background. With the timing skew calibration, the spurs due to clock misalignment are reduced by 20 dB. The proposed ADC achieves an SNDR of 30.7 dB at Nyquist frequency and consumes only 69.5 mW with a figure-of-merit of 124 J/conv-step.
引用
收藏
页码:2891 / 2901
页数:11
相关论文
共 50 条
  • [1] A 69.5mW 20GS/s 6b Time-Interleaved ADC with Embedded Time-to-Digital Calibration in 32nm CMOS SOI
    Chen, Vanessa Hung-Chu
    Pileggi, Lawrence
    2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 380 - +
  • [2] A CMOS 6-Bit 16-GS/s Time-Interleaved ADC with Digital Background Calibration
    Huang, Chun-Cheng
    Wang, Chung-Yi
    Wu, Jieh-Tsorng
    2010 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2010, : 159 - +
  • [3] A 23mW 24GS/s 6b Time-Interleaved Hybrid Two-Step ADC in 28nm CMOS
    Xu, Benwei
    Zhou, Yuan
    Chiu, Yun
    2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS), 2016,
  • [4] A 56 GS/s 8 Bit Time-Interleaved ADC in 28 nm CMOS
    Luan, Jian
    Zheng, Xuqiang
    Wu, Danyu
    Zhang, Yuzhen
    Wu, Linzhen
    Zhou, Lei
    Wu, Jin
    Liu, Xinyu
    ELECTRONICS, 2022, 11 (05)
  • [5] A 6-Bit 20 GS/s Time-Interleaved Two-Step Flash ADC in 40 nm CMOS
    Oh, Dong-Ryeol
    ELECTRONICS, 2022, 11 (19)
  • [6] A CMOS 6-Bit 16-GS/s Time-Interleaved ADC Using Digital Background Calibration Techniques
    Huang, Chun-Cheng
    Wang, Chung-Yi
    Wu, Jieh-Tsorng
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (04) : 848 - 858
  • [7] A 4.1-mW 3.5-GS/s 6-Bit Time-Interleaved ADC in 40-nm CMOS
    Spagnolo, Annachiara
    Verbruggen, Bob
    Wambacq, Piet
    D'Amico, Stefano
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2014, 61 (07) : 466 - 470
  • [8] A 5-GS/s 10-b 76-mW Time-Interleaved SAR ADC in 28 nm CMOS
    Fang, Jie
    Thirunakkarasu, Shankar
    Yu, Xuefeng
    Silva-Rivas, Fabian
    Zhang, Chaoming
    Singor, Frank
    Abraham, Jacob
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2017, 64 (07) : 1673 - 1683
  • [9] A 7.5 GS/s flash ADC and a 10.24 GS/s time-interleaved ADC for backplane receivers in 65 nm CMOS
    Hayun Chung
    Zeynep Toprak Deniz
    Alexander Rylyakov
    John Bulzacchelli
    Daniel Friedman
    Gu-Yeon Wei
    Analog Integrated Circuits and Signal Processing, 2015, 85 : 299 - 310
  • [10] A 7.5 GS/s flash ADC and a 10.24 GS/s time-interleaved ADC for backplane receivers in 65 nm CMOS
    Chung, Hayun
    Deniz, Zeynep Toprak
    Rylyakov, Alexander
    Bulzacchelli, John
    Friedman, Daniel
    Wei, Gu-Yeon
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2015, 85 (02) : 299 - 310