Deep level defects in AlxGa1-xN/GaN heterointerfaces grown by molecular beam epitaxy

被引：0

作者：

Jeon, Hee Chang ^{[1
]}

Park, Chan Jin ^{[1
]}

Cho, Hoon Young ^{[1
]}

Kang, Tae Won ^{[1
]}

Kim, Tae Whan ^{[2
]}

Oh, Jae Eung ^{[3
]}

机构：

[1] Dongguk Univ, Dept Phys, 3-26,Pildong, Seoul 100715, South Korea

[2] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea

[3] Hanyang Univ, Dept Elect & Comp Engn, Seoul 425791, South Korea

来源：

ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2 | 2007年 / 124-126卷

关键词：

deep levels; two-dimensional electron gas region; AlxGa1-xN/GaN heterointerface;

D O I：

10.4028/www.scientific.net/SSP.124-126.89

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the AlxGa1-xN/GaN heterointerface was 4 x 10(12) cm(2). The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.

引用

页码：89 / +

页数：2

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