Photoconductive detectors based on partially ordered AlxGa1-xN alloys grown by molecular beam epitaxy

被引：42
|
作者：
Misra, M
Korakakis, D
Ng, HM
Moustakas, TD
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Boston Univ, Ctr Photon Res, Boston, MA 02215 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期
关键词：
D O I：
10.1063/1.123801
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoconductive detectors based on partially ordered AlxGa1-xN alloys with AlN mole fractions up to 45% were fabricated and evaluated. The degree of ordering in these alloys was found to increase with the AlN mole fraction and it has a maximum value at about 50%. The resistivity of the AlxGa1-xN films was found to increase from 10 to 10(8) Ohm cm by increasing the Al content in the films. Correspondingly, the mobility-lifetime (mu tau) product, which was determined by measuring the photoconductive gain, was found to decrease from 10(-2) to 10(-5) cm(2)/V. These high values of the mu tau product at the high AlN mole fraction are attributed to spatial separation and indirect recombination of the photogenerated electron hole pairs, due to band-gap misalignment of the ordered and disordered domains in these films. (C) 1999 American Institute of Physics. [S0003-6951(99)02815-6].
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收藏
页码：2203 / 2205
页数：3
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