AlxGa1-xN and GaN/AlxGa1-xN Quantum Wells Grown by Gas Source Molecular Beam Epitaxy

被引：0
|
作者：
Wang Xiaoliang
机构：
来源：
Journal of Semiconductors | 1999年 / 05期
关键词：
GaN/Al_xGa; and; x)N; Gas; Molecular; Source; Al_xGa;
D O I：
暂无
中图分类号：
TN405.984 [];
学科分类号：
080903 ; 1401 ;
摘要：
１ＩｎｔｒｏｄｕｃｔｉｏｎＧａＮａｎｄＡｌｘＧａ１－ｘＮａｒｅｐｏｔｅｎｔｉａｌｍａｔｅｒｉａｌｓｆｏｒｕｓｅｉｎｕｌｔｒａｖｉｏｌｅｔｌｉｇｈｔ－ｅｍｉｔｉｎｇｄｉｏｄｅｓａｎｄｄｅｔｅｃｔｏｒｓ，ｓｈｏｒｔｗａｖｅｌｅｎｇｔｈｌａｓｅｒｓａｎｄｈ...
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页码：3 / 5
页数：5
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