Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers

被引：2
|
作者：
Kanjilal, A. [1 ]
Prucnal, S. [1 ]
Rebohle, L. [1 ]
Voelskow, M. [1 ]
Helm, M. [1 ]
Skorupa, W. [1 ]
机构：
[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 11期
关键词：
elemental semiconductors; erbium; germanium; incoherent light annealing; nanostructured materials; photoluminescence; recrystallisation; silicon compounds;
D O I：
10.1063/1.3437652
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The furnace and flash-lamp annealing (FLA) temperature dependent variation in the room temperature 1.53 mu m Er photoluminescence (PL) from Er-doped Ge-rich SiO2 layers is investigated. The appearance of the 1.53 mu m Er PL is discussed in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+. Detailed analyses suggest that in case of FLA the decrease in the 1.53 mu m Er PL intensity is governed by the temperature dependent recrystallization of Ge nanoclusters, while for furnace-annealing it is associated with the reduction in the LC-Er3+ coupling due to Ge out-diffusion and the formation of Er-rich clusters with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3437652]
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页数：3
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