Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

被引：9
|
作者：
Gu Xiuquan [1 ]
Zhu Liping [1 ]
Ye Zhizhen [1 ]
He Haiping [1 ]
Zhao Binghui [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
RARE METALS | 2006年 / 25卷 / 30-35期
基金：
中国国家自然科学基金;
关键词：
Er3+ ions; ZnO; near-infrared photoemission; optical communication;
D O I：
10.1016/S1001-0521(08)60047-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O-2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 mu m. The samples annealed at 700 and 850 degrees C show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 degrees C. The possible mechanism was discussed.
引用
收藏
页码：30 / 35
页数：6
相关论文
共 50 条
  • [1] Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition
    GU Xiuquan
    Rare Metals, 2006, (S2) : 30 - 35
  • [2] Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films
    Rozo, C.
    Fonseca, L. F.
    Jaque, D.
    Sole, J. Garcia
    JOURNAL OF LUMINESCENCE, 2008, 128 (5-6) : 897 - 900
  • [3] Photoluminescence and electroluminescence from Er-doped SiOx thin films prepared through pulsed laser deposition
    Lim, Y
    Park, K
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (06) : 1023 - 1027
  • [4] Hydrogen passivation of er and si nanocrystallites in Er-doped SiO2 -: Increase in photoluminescence
    Fukata, N
    Li, C
    Uematsu, H
    Arai, T
    Makimura, T
    Murakami, K
    Group-IV Semiconductor Nanostructures, 2005, 832 : 379 - 384
  • [5] Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er
    Chen, CY
    Chen, WD
    Song, SF
    Hsu, CC
    JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 10 - 15
  • [6] Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation
    Fukata, N.
    Li, C.
    Morihiro, H.
    Murakami, K.
    Mitome, M.
    Bando, Y.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 84 (04): : 395 - 401
  • [7] Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation
    N. Fukata
    C. Li
    H. Morihiro
    K. Murakami
    M. Mitome
    Y. Bando
    Applied Physics A, 2006, 84 : 395 - 401
  • [8] Er-doped oxyfluoride silicate thin films prepared by pulsed laser deposition
    Caricato, A. P.
    Fazzi, A.
    Jha, A.
    Kar, A.
    Leggieri, G.
    Luches, A.
    Martino, M.
    Romano, F.
    Shen, S.
    Taghizadeh, M.
    Thomson, R.
    Tunno, T.
    OPTICAL MATERIALS, 2007, 29 (09) : 1166 - 1170
  • [9] Pulsed laser deposition of thin carbon films on SiO2/Si substrates
    Milenov, Teodor
    Dikovska, Anna
    Avdeev, Georgi
    Avramova, Ivalina
    Kirilov, Kiril
    Karashanova, Daniela
    Terziyska, Penka
    Georgieva, Biliana
    Arnaudov, Boris
    Kolev, Stefan
    Valcheva, Evgenia
    APPLIED SURFACE SCIENCE, 2019, 480 : 323 - 329
  • [10] Growth of ZnO thin film on SiO2/Si substrate by pulsed laser deposition and study of their physical properties
    Zerdali, M
    Hamzaoui, S
    Teherani, FH
    Rogers, D
    MATERIALS LETTERS, 2006, 60 (04) : 504 - 508
12345