Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

被引：9
|
作者：
Gu Xiuquan [1 ]
Zhu Liping [1 ]
Ye Zhizhen [1 ]
He Haiping [1 ]
Zhao Binghui [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
RARE METALS | 2006年 / 25卷 / 30-35期
基金：
中国国家自然科学基金;
关键词：
Er3+ ions; ZnO; near-infrared photoemission; optical communication;
D O I：
10.1016/S1001-0521(08)60047-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O-2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 mu m. The samples annealed at 700 and 850 degrees C show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 degrees C. The possible mechanism was discussed.
引用
收藏
页码：30 / 35
页数：6
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