Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers

被引：2

作者：

Kanjilal, A. ^{[1
]}

Prucnal, S. ^{[1
]}

Rebohle, L. ^{[1
]}

Voelskow, M. ^{[1
]}

Helm, M. ^{[1
]}

Skorupa, W. ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 11期

关键词：

elemental semiconductors; erbium; germanium; incoherent light annealing; nanostructured materials; photoluminescence; recrystallisation; silicon compounds;

D O I：

10.1063/1.3437652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The furnace and flash-lamp annealing (FLA) temperature dependent variation in the room temperature 1.53 mu m Er photoluminescence (PL) from Er-doped Ge-rich SiO2 layers is investigated. The appearance of the 1.53 mu m Er PL is discussed in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+. Detailed analyses suggest that in case of FLA the decrease in the 1.53 mu m Er PL intensity is governed by the temperature dependent recrystallization of Ge nanoclusters, while for furnace-annealing it is associated with the reduction in the LC-Er3+ coupling due to Ge out-diffusion and the formation of Er-rich clusters with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3437652]

引用

页数：3

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