Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO2

被引:5
|
作者
Fukata, N. [1 ]
Morihiro, H. [2 ]
Shirakawa, R. [2 ]
Murakami, K. [2 ]
Mitome, M. [3 ]
Bando, Y. [3 ]
机构
[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Nanoscale Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.2817639
中图分类号
O59 [应用物理学];
学科分类号
摘要
The formation of Si nanocrystallites (nc-Si) in erbium (Er)-dispersed SiO(x) (x <= 2) films was investigated by in situ annealing while performing transmission electron microscopy measurements. The correlation between the formation of nc-Si and Er ion emissions was also comprehensively investigated by photoluminescence and electron spin resonance measurements. The results showed that the formation of nano-Si region with the suitable size is important for enhancement of Er ion emission. (c) 2007 American Institute of Physics.
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页数:4
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