Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers

被引：2
|
作者：
Kanjilal, A. [1 ]
Prucnal, S. [1 ]
Rebohle, L. [1 ]
Voelskow, M. [1 ]
Helm, M. [1 ]
Skorupa, W. [1 ]
机构：
[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 11期
关键词：
elemental semiconductors; erbium; germanium; incoherent light annealing; nanostructured materials; photoluminescence; recrystallisation; silicon compounds;
D O I：
10.1063/1.3437652
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The furnace and flash-lamp annealing (FLA) temperature dependent variation in the room temperature 1.53 mu m Er photoluminescence (PL) from Er-doped Ge-rich SiO2 layers is investigated. The appearance of the 1.53 mu m Er PL is discussed in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+. Detailed analyses suggest that in case of FLA the decrease in the 1.53 mu m Er PL intensity is governed by the temperature dependent recrystallization of Ge nanoclusters, while for furnace-annealing it is associated with the reduction in the LC-Er3+ coupling due to Ge out-diffusion and the formation of Er-rich clusters with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3437652]
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO2 layers
    Kanjilal, A.
    Rebohle, L.
    Prucnal, S.
    Voelskow, M.
    Skorupa, W.
    Helm, M.
    PHYSICAL REVIEW B, 2009, 80 (24)
  • [2] Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps
    Kanjilal, A.
    Rebohle, L.
    Voelskow, M.
    Helm, M.
    Skorupa, W.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [3] Luminescence efficiency at 1.5 μm of Er-doped thick SiO layers and Er-doped SiO/SiO2 multilayers
    Adeola, G. Wora
    Jambois, O.
    Miska, P.
    Rinnert, H.
    Vergnat, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (10)
  • [4] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
    Rebohle, L
    von Borany, J
    Skorupa, W
    Tyschenko, IE
    Fröb, H
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 275 - 279
  • [5] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
    Rebohle, L
    von Borany, J
    Skorupa, W
    Tyschenko, IE
    Fröb, H
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 275 - 279
  • [6] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
    Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf e.V., PF 510119, 01314 Dresden, Germany
    不详
    不详
    J Lumin, 1-4 (275-279):
  • [7] Hydrogen passivation of er and si nanocrystallites in Er-doped SiO2 -: Increase in photoluminescence
    Fukata, N
    Li, C
    Uematsu, H
    Arai, T
    Makimura, T
    Murakami, K
    Group-IV Semiconductor Nanostructures, 2005, 832 : 379 - 384
  • [8] Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering
    Gourbilleau, F
    Dufour, C
    Levalois, M
    Vicens, J
    Rizk, R
    Sada, C
    Enrichi, F
    Battaglin, G
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 3869 - 3874
  • [9] Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering
    Gourbilleau, F. (fabrice.gourbilleau@ismra.fr), 1600, (American Institute of Physics Inc.):
  • [10] Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO2 sensitized with Si nanocrystals
    Timmerman, D.
    Saeed, S.
    Gregorkiewicz, T.
    OPTICAL MATERIALS, 2011, 33 (07) : 1091 - 1093
12345