Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps

被引：1

作者：

Kanjilal, A. ^{[1
]}

Rebohle, L. ^{[1
]}

Voelskow, M. ^{[1
]}

Helm, M. ^{[1
]}

Skorupa, W. ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

charge injection; electroluminescence; erbium; incoherent light annealing; MIS structures; radiation quenching; semiconductor doping; silicon compounds; SILICON;

D O I：

10.1063/1.3296252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Systematic evolution of the 400 nm electroluminescence (EL) with increasing flash lamp annealing (FLA) temperature from 800 to 1100 degrees C in an Er-doped Ge-rich metal-oxide semiconductor structure is presented. No significant change in the 1535 nm Er EL is observed with increasing FLA temperature. Enhancement of the 400 nm EL decay time with rising FLA temperature is found to be associated with recrystallization of the damaged Ge clusters in the absence of Ge outdiffusion. The 400 nm EL quenching with continuous charge injection process is also discussed within the device operation time.

引用

页数：5

共 17 条

[1] Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping
Kanjilal, A.
Rebohle, L.
Voelskow, M.
Skorupa, W.
Helm, M.
Journal of Applied Physics, 2009, 106 (02):
[2] Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping
Kanjilal, A.
Rebohle, L.
Voelskow, M.
Skorupa, W.
Helm, M.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
[3] The role of Ge-related oxygen-deficiency centers in controlling the blue-violet photo- and electroluminescence in Ge-rich SiO2 via Er doping
Kanjilal, A.
Tsushima, S.
Goetz, C.
Rebohle, L.
Voelskow, M.
Skorupa, W.
Helm, M.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
[4] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
Rebohle, L
von Borany, J
Skorupa, W
Tyschenko, IE
Fröb, H
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 275 - 279
[5] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
Rebohle, L
von Borany, J
Skorupa, W
Tyschenko, IE
Fröb, H
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 275 - 279
[6] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf e.V., PF 510119, 01314 Dresden, Germany
不详
不详
J Lumin, 1-4 (275-279):
[7] Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
Kanjilal, A.
Prucnal, S.
Rebohle, L.
Voelskow, M.
Helm, M.
Skorupa, W.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
[8] Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal enriched Er-doped SiO2 layers
Kanjilal, A.
Rebohle, L.
Baddela, N. K.
Zhou, S.
Voelskow, M.
Skorupa, W.
Helm, M.
PHYSICAL REVIEW B, 2009, 79 (16):
[9] Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO2 layers
Kanjilal, A.
Rebohle, L.
Prucnal, S.
Voelskow, M.
Skorupa, W.
Helm, M.
PHYSICAL REVIEW B, 2009, 80 (24)
[10] Effect of the annealing treatments on the electroluminescence efficiency of SiO2 layers doped with Si and Er
Jambois, O.
Ramirez, J. M.
Berencen, Y.
Navarro-Urrios, D.
Anopchenko, A.
Marconi, A.
Prtljaga, N.
Tengattini, A.
Pellegrino, P.
Daldosso, N.
Pavesi, L.
Colonna, J-P
Fedeli, J-M
Garrido, B.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (04)

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