Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping

被引：0
|
作者：
Kanjilal, A. [1 ]
Rebohle, L. [1 ]
Voelskow, M. [1 ]
Skorupa, W. [1 ]
Helm, M. [1 ]
机构：
[1] Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 51 01 19, 01314 Dresden, Germany
来源：
Journal of Applied Physics | 2009年 / 106卷 / 02期
关键词：
Using combined microstructural and electroluminescence (EL) investigations of the Er-doped Ge-rich SiO2 layers; it is established that the Ge-related oxygen-deficiency centers (GeODCs); which are associated with the 407 nm light emission; are situated at the Ge nanocrystal/ SiO2 interface. Electrically driven energy transfer from the Er3+ to GeODCs causes an increase in the 407 nm EL intensity. It reaches a maximum before quenching with increasing Er concentration due to the crystalline-to-amorphous transition of Ge nanocrystals. Ge concentration dependent quenching of the maximum EL intensity and the peak shifting toward higher Er concentration are discussed in terms of the reduction of the surface-to-volume ratio with increasing nanocrystal size. © 2009 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping
    Kanjilal, A.
    Rebohle, L.
    Voelskow, M.
    Skorupa, W.
    Helm, M.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
  • [2] Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps
    Kanjilal, A.
    Rebohle, L.
    Voelskow, M.
    Helm, M.
    Skorupa, W.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [3] The role of Ge-related oxygen-deficiency centers in controlling the blue-violet photo- and electroluminescence in Ge-rich SiO2 via Er doping
    Kanjilal, A.
    Tsushima, S.
    Goetz, C.
    Rebohle, L.
    Voelskow, M.
    Skorupa, W.
    Helm, M.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [4] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
    Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf e.V., PF 510119, 01314 Dresden, Germany
    不详
    不详
    J Lumin, 1-4 (275-279):
  • [5] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
    Rebohle, L
    von Borany, J
    Skorupa, W
    Tyschenko, IE
    Fröb, H
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 275 - 279
  • [6] Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers
    Rebohle, L
    von Borany, J
    Skorupa, W
    Tyschenko, IE
    Fröb, H
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 275 - 279
  • [7] Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal enriched Er-doped SiO2 layers
    Kanjilal, A.
    Rebohle, L.
    Baddela, N. K.
    Zhou, S.
    Voelskow, M.
    Skorupa, W.
    Helm, M.
    PHYSICAL REVIEW B, 2009, 79 (16):
  • [8] Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers
    Rebohle, L
    Gebel, T
    von Borany, J
    Skorupa, W
    Helm, M
    Pacifici, D
    Franzò, G
    Priolo, F
    APPLIED PHYSICS B-LASERS AND OPTICS, 2002, 74 (01): : 53 - 56
  • [9] Transient behavior of the strong violet electroluminescence of Ge-implanted SiO2 layers
    L. Rebohle
    T. Gebel
    J. von Borany
    W. Skorupa
    M. Helm
    D. Pacifici
    G. Franzò
    F. Priolo
    Applied Physics B, 2002, 74 : 53 - 56
  • [10] Violet and orange luminescence from Ge-implanted SiO2 layers
    Lee, WS
    Jeong, JY
    Kim, HB
    Chae, KH
    Whang, CN
    Im, S
    Song, JH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 474 - 478
12345