Post-implantation annealing of SiC studied by slow-positron spectroscopies

被引：37

作者：

Brauer, G

Anwand, W

Coleman, PG

Stormer, J

Plazaola, F

Campillo, JM

Pacaud, Y

Skorupa, W

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

[2] Univ E Anglia, Sch Phys, Norwich NR4 7TJ, Norfolk, England

[3] Univ Bundeswehr Munchen, Inst Nukl Festkorperphys, D-85577 Neubiberg, Germany

[4] Euskal Herriko Uniberisitatea, Bilbao 48080, Spain

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 05期

关键词：

D O I：

10.1088/0953-8984/10/5/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The:measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to 1500 degrees C.

引用

页码：1147 / 1156

页数：10

共 50 条

[41] The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy
Li, B. S.
Zhang, C. H.
Zhong, Y. R.
Wang, D. N.
Zhou, L. H.
Yang, Y. T.
Zhang, H. H.
Zhang, L. Q.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (14): : 2395 - 2398
[42] Carbon-implanted ultra-high molecular-weight polyethylene studied by a pulsed slow-positron beam
Djourelov, N
He, C
Suzuki, T
Ito, Y
Velitchkova, K
Hamada, E
Kondo, K
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 215 (1-2): : 83 - 89
[43] Influence of post-implantation annealing on the oxidation behavior of Nb implanted γ-TiAl based alloy
Li, XY
Zhang, TH
Ma, BK
Zhang, YG
Chen, CQ
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 169 : 37 - 42
[44] Simulation of high-concentration boron diffusion in silicon during post-implantation annealing
Uematsu, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (6A): : 3433 - 3439
[45] THE FORMATION OF HELIUM BUBBLES NEAR THE SURFACE AND IN THE BULK IN NICKEL DURING POST-IMPLANTATION ANNEALING
CHERNIKOV, VN
TRINKAUS, H
JUNG, P
ULLMAIER, H
JOURNAL OF NUCLEAR MATERIALS, 1990, 170 (01) : 31 - 38
[46] Oxygen gettering on buried layers at post-implantation annealing of hydrogen implanted Czochralski silicon
Job, R
Fahrner, WR
Ulyashin, AG
Bumay, YA
Ivanov, AI
Palmetshofer, L
SOLID STATE PHENOMENA, 1997, 57-8 : 91 - 96
[47] Magnetic properties of Fe+-implanted silica films after post-implantation annealing
Ding, XZ
Tay, BK
Shi, X
Chiah, MF
Cheung, WY
Wong, SP
Xu, JB
Wilson, IH
JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2745 - 2749
[48] Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Hauf, Moritz
Schmidt, Gerhard
Niedernostheide, Franz-Josef
Johnsson, Anna
Pichler, Peter
2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018), 2018, : 267 - 270
[49] Simulation of clustering and pile-up during post-implantation annealing of phosphorus in silicon
Schroer, Erwin
Uematsu, Masashi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (1 A): : 7 - 11
[50] Simulation of high-concentration boron diffusion in silicon during post-implantation annealing
Uematsu, Masashi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (6 A): : 3433 - 3439

← 1 2 3 4 5 →