Post-implantation annealing of SiC studied by slow-positron spectroscopies

被引：37
|
作者：
Brauer, G
Anwand, W
Coleman, PG
Stormer, J
Plazaola, F
Campillo, JM
Pacaud, Y
Skorupa, W
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
[2] Univ E Anglia, Sch Phys, Norwich NR4 7TJ, Norfolk, England
[3] Univ Bundeswehr Munchen, Inst Nukl Festkorperphys, D-85577 Neubiberg, Germany
[4] Euskal Herriko Uniberisitatea, Bilbao 48080, Spain
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 05期
关键词：
D O I：
10.1088/0953-8984/10/5/022
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The:measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to 1500 degrees C.
引用
收藏
页码：1147 / 1156
页数：10
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