Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations

被引：0

作者：

Hauf, Moritz ^{[1
]}

Schmidt, Gerhard ^{[2
]}

Niedernostheide, Franz-Josef ^{[1
]}

Johnsson, Anna ^{[3
]}

Pichler, Peter ^{[3
,4
]}

机构：

[1] Infineon Technol AG, Munich, Germany

[2] Infineon Technol Austria AG, Villach, Austria

[3] Fraunhofer Inst Integrated Syst & Device Technol, Erlangen, Germany

[4] Univ Erlangen Nurnberg, Chair Electron Devices, Erlangen, Germany

来源：

2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) | 2018年

关键词：

platinum implantation; silicon; diffusion; process simulation; device simulation; DIFFUSION; MECHANISM;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 degrees C and the dose range from 1x10(12) to 1x10(13) cm(-2). The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.

引用

页码：267 / 270

页数：4

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