On continuum simulations of the evolution of faulted and perfect dislocation loops in silicon during post-implantation annealing

被引：0

作者：

Johnsson, Anna ^{[1
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol I, Dept Modeling & Artificial Intelligence, Schottkystr 10, D-91058 Erlangen, Germany

来源：

MRS ADVANCES | 2022年 / 7卷 / 36期

基金：

欧盟地平线“2020”;

关键词：

DEFECTS; SI;

D O I：

10.1557/s43580-022-00424-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Predictive models of the damage evolution during post-implantation annealing are important for predicting the performance of final devices. An existing model of the thermal evolution of dislocation loops in silicon during post-implantation annealing has been recalibrated to better capture the distinction between faulted and perfect dislocation loops. The calibration was based on experimental findings from the literature on the simultaneous presence of both faulted and perfect dislocation loops after post-implantation annealing.

引用

页码：1315 / 1320

页数：6

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