Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

被引：8

作者：

Chromik, S. ^{[1
]}

Gierlowski, P. ^{[2
]}

Spankova, M. ^{[1
]}

Dobrocka, E. ^{[1
]}

Vavra, I. ^{[1
]}

Strbik, V. ^{[1
]}

Lalinsky, T. ^{[1
]}

Sojkova, M. ^{[1
]}

Liday, J. ^{[3
]}

Vogrincic, P. ^{[3
]}

Espinos, J. P. ^{[4
]}

机构：

[1] Inst Elect Engn SAS, Bratislava 84104, Slovakia

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia

[4] CSIC Univ Seville, Inst Ciencia Mat Sevilla, Seville 41092, Spain

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 18期

关键词：

Magnetron sputtering; Pulsed laser deposition (PLD); YBCO thin films; GaN substrates; X-ray diffraction; Transmission electron microscopy; Auger electron spectroscopy; THIN-FILMS;

D O I：

10.1016/j.apsusc.2010.03.035

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Phi-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 degrees to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 degrees C is applied. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：5618 / 5622

页数：5

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