Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire

被引：0

作者：

Nikolaev, V. I. ^{[1
,3
]}

Polyakov, A. Ya. ^{[2
]}

Stepanov, S. I. ^{[1
,3
]}

Pechnikov, A. I. ^{[1
]}

Nikolaev, V. V. ^{[3
]}

Yakimov, E. B. ^{[4
]}

Scheglov, M. P. ^{[1
]}

Chikiryaka, A. V. ^{[1
]}

Guzilova, L. I. ^{[1
]}

Timashov, R. B. ^{[1
]}

Shapenkov, S. V. ^{[1
]}

Butenko, P. N. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

[2] Natl Univ Sci & Technol MISiS, Moscow, Russia

[3] Perfect Crystals LLC, St Petersburg, Russia

[4] Russian Acad Sci, Inst Microelect Technol, Chernogolovka, Moscow, Russia

来源：

TECHNICAL PHYSICS | 2023年 / 68卷 / 12期

基金：

俄罗斯科学基金会;

关键词：

Gallium oxide; HVPE; epitaxial layers; sapphire substrates;

D O I：

10.1134/S1063784223080236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Record thick (up to 100 mu m) epitaxial layers of a prospective metastable semiconductor Ga(2)O(3 )were grown by HVPE (Halide Vapor Phase Epitaxy) on GaN buffer layers on c-sapphire substrates. The X-ray diffraction pattern of the layers show that the structure of the layer is a pure kappa(epsilon)-Ga(2)O(3 )without any other phases. At the same time, the organization of a domain structure was observed, which manifests itself in the form of pseudohexagonal prisms that retain the orientation of the gallium nitride sublayer. Schottky diodes with nickel contacts were fabricated and the electrical and photoelectric properties of the layers were studied. Capacitance-voltage (C-V) and frequency-capacitance (C-f) dependencies were studied, photocurrent and photocapacitance spectra were measured.

引用

页码：689 / 694

页数：6

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