Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

被引：0

作者：

Nikolaev, V. I. ^{[1
,3
]}

Polyakov, A. Y. ^{[2
]}

Stepanov, S. I. ^{[1
,3
]}

Pechnikov, A. I. ^{[1
,3
]}

Guzilova, L. I. ^{[3
]}

Scheglov, M. P. ^{[3
]}

Chikiryaka, A. V. ^{[3
]}

机构：

[1] Perfect Crystals LLC, St Petersburg, Russia

[2] Natl Univ Sci & Technol MISiS, Moscow, Russia

[3] Ioffe Inst, St Petersburg, Russia

来源：

MATERIALS PHYSICS AND MECHANICS | 2023年 / 51卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

gallium oxide; HVPE; epitaxial layers; c-plane and r-plane sapphire substrates; ALPHA;

D O I：

10.18149/MPM.5112023_1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we study the thermal stabilization of metastable alpha-Ga2O3 in growth experiments. Gallium oxide films are grown on c-and r-plane sapphire substrates by halide vapor phase epitaxy (HVPE) at the temperature range of 450-690 oC. The surface morphology is investigated by scanning electron microscopy. The structural quality and phase composition of the grown films is studied by X-ray diffraction. It is found that the use of r-plane sapphire substrates prevents the formation of the orthorhombic kappa-Ga2O3 and monoclinic fl-Ga2O3 and thus extends the growth process window for the deposition of the rhombohedral alpha-phase of gallium oxide.

引用

页码：1 / 9

页数：9

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