α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire

被引：25
|
作者：
Oshima, Takayoshi [1 ]
Kato, Yuji [1 ]
Imura, Masataka [2 ]
Nakayama, Yoshiko [3 ]
Takeguchi, Masaki [3 ]
机构：
[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
[2] NIMS, Tsukuba, Ibaraki 3050044, Japan
[3] NIMS, Tsukuba, Ibaraki 3050047, Japan
来源：
APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 06期
关键词：
CHEMICAL-VAPOR-DEPOSITION; ALPHA-GA2O3; THIN-FILMS; EPITAXIAL-GROWTH;
D O I：
10.7567/APEX.11.065501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ten-period binary alpha-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic variation of alpha-Ga2O3 thickness and evaluation through X-ray reflectivity and diffraction measurements and scanning transmission electron microscopy, we verified that the superlattice with alpha-Ga2O3 thickness up to similar to 1 nm had coherent interfaces without misfit dislocation in spite of the large lattice mismatches. This successful fabrication of coherent alpha-Al2O3/Ga2O3 superiattices will encourage further development of alpha-(AlxGa1-x)(2)O-3-based heterostructures including superiattices. (C) 2018 The Japan Society of Applied Physics
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页数：4
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