Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

被引：8
|
作者：
Chromik, S. [1 ]
Gierlowski, P. [2 ]
Spankova, M. [1 ]
Dobrocka, E. [1 ]
Vavra, I. [1 ]
Strbik, V. [1 ]
Lalinsky, T. [1 ]
Sojkova, M. [1 ]
Liday, J. [3 ]
Vogrincic, P. [3 ]
Espinos, J. P. [4 ]
机构：
[1] Inst Elect Engn SAS, Bratislava 84104, Slovakia
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia
[4] CSIC Univ Seville, Inst Ciencia Mat Sevilla, Seville 41092, Spain
来源：
APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 18期
关键词：
Magnetron sputtering; Pulsed laser deposition (PLD); YBCO thin films; GaN substrates; X-ray diffraction; Transmission electron microscopy; Auger electron spectroscopy; THIN-FILMS;
D O I：
10.1016/j.apsusc.2010.03.035
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Phi-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 degrees to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 degrees C is applied. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码：5618 / 5622
页数：5
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