Characterization of AlGaN, Te-doped GaN and mg-doped GaN grown by hydride vapor phase epitaxy

The AlxGa1-xN, Te-doped GaN and Mg-doped GaN layers on GaN/A1(2)O(3) substrates are grown by mixed-source hydride vapor phase epitaxy (HVPE) method. The metallic Ga mixed with Al is used as group Ill source material to get the AlxGa1-xN layers. The values of the compositions x of the AI(x)Ga(1-x)N layers characterized by X-ray diffraction (XRD) measurements are 0.6 % similar to 80 % at the various temperatures of the source zone. The metallic Ga mixed with Te (or Mg) is used as source material for n-type (or p-type) doping. The electron concentrations of the Te-doped GaN layers are varied from 1.8 X 10(17) to 8.3 x 10(18)/cm(3). The hole concentrations of the Mg-doped GaN layers are varied from 1.5 x 10(16) to 3.2 x 10(16)/cm(3). We find that the mixed-source HVPE method is suitable to get a thick AlGaN layer with an arbitrary composition, a Te-doped GaN layer with a high n-type concentration and a Mg-doped GaN layer with p-type concentration.