Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

被引：24
|
作者：
Polyakov, A. Y.
Smirnov, N. B.
Govorkov, A. V.
Vdovin, V. I.
Markov, A. V.
Shlensky, A. A.
Prebble, Ed
Hanser, Drew
Zavada, J. M.
Pearton, S. J.
机构：
[1] Inst Rare Met, Moscow 119017, Russia
[2] Kyma Technologies Inc, Raleigh, NC 27617 USA
[3] USA, Res Off, Div Elect, Res Triangle Pk, NC 27709 USA
[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1116/1.2718962
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties, deep level spectra, optical transmission, and luminescence spectra were measured on freestanding GaN crystals grown by hydride vapor phase epitaxy. The samples are semi-insulating n type with room temperature resistivity of 3.8 X 10(9) Omega cm and high. electron mobility of 715 cm(2)/V s. The Fermi level in these samples is pinned by a Fe-related level near E-c-0.57 eV that could be due to the Fe2+/Fe3+, transition. This level manifests itself also as a strong blue luminescence band peaked near 2.85 eV. An additional Fe-related band with optical threshold near 1.6 eV is observed in optical transmission spectra. The samples are paramagnetic, suggesting an absence of significant Fe precipitation. (c) 2007 American Vacuum Society.
引用
收藏
页码：686 / 690
页数：5
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