AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)

被引：76

作者：

Prakash, Gyan ^{[1
,2
]}

Capano, Michael A. ^{[2
,3
]}

Bolen, Michael L. ^{[2
,3
]}

Zemlyanou, Dmitry ^{[2
]}

Reifenberger, Ronald G. ^{[1
,2
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect Engn, W Lafayette, IN 47907 USA

来源：

CARBON | 2010年 / 48卷 / 09期

关键词：

THERMAL-EXPANSION; GRAPHITE; GRAPHITIZATION; 6H-SIC(0001); TEMPERATURE; MEMBRANES; DYNAMICS; PHASE;

D O I：

10.1016/j.carbon.2010.02.026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A characterization of the graphitic overlayer that forms on 4H-SiC(000 (1) over bar) substrates heated for ten minutes to temperatures T > 1350 degrees C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increases with growth temperature. Parallel atomic force microscope (AFM) studies find a mesh-like network of ridges with high curvature that bound atomically flat, tile-like facets of few-layer graphene (FLG). By imaging the network that develops on FLG, it is possible to map out the regions where the elastic energy is concentrated. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：2383 / 2393

页数：11

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