5 Gb/s Optical Transceiver for MEMS Tunable HCG-VCSEL in 65 nm CMOS Sean

被引：1

作者：

Quintans, Sean Kane Lloyd M. ^{[1
]}

Narcida, Francesca Bea, V ^{[1
]}

Tordesillas, Janette Eira A. ^{[1
]}

Sabino, Maria Patricia Rouelli G. ^{[1
]}

Alvarez, Anastacia B. ^{[1
]}

de Leon, Maria Theresa G. ^{[1
]}

Hizon, John Richard E. ^{[1
]}

Santos, Christopher G. ^{[1
]}

Rosales, Marc D. ^{[1
]}

机构：

[1] Univ Philippines Diliman, Elect & Elect Engn Inst, Quezon City, Philippines

来源：

2020 17TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC 2020) | 2020年

关键词：

VCSEL; CA and CC VCSEL driver; EDMOS;

D O I：

10.1109/ISOCC50952.2020.9333075

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 5 Gb/s optical transceiver design for a MEMS-Tunable 3rd-Generation VCSEL in 65 nm CMOS process operating at a lasing wavelength of 1060 nm is presented. Two approaches to drive the laser, namely common-anode (CA) and common-cathode (CC) VCSEL driver topologies, were explored. For the CC VCSEL driver wherein the VCSEL is powered by the chip, extended drain MOS (EDMOS) transistors were used as they can handle higher voltages unlike the standard transistors from the process. The system with the CA VCSEL driver resulted in a higher operating speed of up to 8 Gb/s and a higher energy efficiency of 1.1356 pJ/b, as compared to the system with the CC VCSEL driver that achieved a speed of up to 6 Gb/s and an energy efficiency of 3.668 pJ/b.

引用

页码：47 / 48

页数：2

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