An automated MOSFET doping profiling technique

被引：0
|
作者：
Datta, D [1 ]
Singh, DN [1 ]
Pradeep, YR [1 ]
机构：
[1] SEMICOND COMPLEX LTD,SAS,NAGAR,PUNJAB,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：51 / 53
页数：3
相关论文
共 50 条
  • [1] MOSFET DOPING PROFILING
    FELDBAUMER, DW
    SCHRODER, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) : 135 - 140
  • [2] VIZR—an automated chemometric technique for metabolic profiling
    Gregory A. Barding
    Daniel J. Orr
    Sumukh M. Sathnur
    Cynthia K. Larive
    Analytical and Bioanalytical Chemistry, 2013, 405 : 8409 - 8417
  • [3] HYDROGENATION FOR POLYSILICON MOSFET'S BY ION SHOWER DOPING TECHNIQUE.
    Setsune, K.
    Miyauchi, M.
    Hirao, T.
    Electron device letters, 1986, EDL-7 (11): : 618 - 620
  • [4] VIZR-an automated chemometric technique for metabolic profiling
    Barding, Gregory A., Jr.
    Orr, Daniel J.
    Sathnur, Sumukh M.
    Larive, Cynthia K.
    ANALYTICAL AND BIOANALYTICAL CHEMISTRY, 2013, 405 (26) : 8409 - 8417
  • [5] p-MOSFET and n-MOSFET Prepared by ICP-Assisted Hot Wire Implantation Doping Technique
    Chen, Y. H.
    Chang, S. J.
    Wu, C. J.
    Hsueh, T. J.
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (06) : 698 - 700
  • [6] A DIRECT DEPLETION CAPACITANCE MEASUREMENT TECHNIQUE TO DETERMINE THE DOPING PROFILE UNDER THE GATE OF A MOSFET
    WIKSTROM, JA
    VISWANATHAN, CR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2217 - 2219
  • [7] DIRECT DEPLETION CAPACITANCE MEASUREMENT TECHNIQUE TO DETERMINE THE DOPING PROFILE UNDER THE GATE OF A MOSFET.
    Wikstrom, J.A.
    Viswanathan, C.R.
    IEEE Transactions on Electron Devices, 1987, ED-34 (10) : 2217 - 2219
  • [8] Localization of heavy doping missing defect in MOSFET by the combined use of nanoprobing analysis and SCM technique
    Zheng, Shijun
    Wang, Xiangdong
    Che, Yi
    MICROELECTRONICS RELIABILITY, 2025, 168
  • [9] The effect of the doping level of a MOSFET substrate on the size of the doping region
    Andreev, AD
    Borzdov, VM
    Valiev, AA
    Zhevnyak, OG
    Komarov, FF
    DOKLADY AKADEMII NAUK BELARUSI, 1999, 43 (01): : 37 - 40
  • [10] Choice of electrolyte for doping profiling in Si by electrochemical C-V technique
    Basaran, E
    APPLIED SURFACE SCIENCE, 2001, 172 (3-4) : 345 - 350
12345