HYDROGENATION FOR POLYSILICON MOSFET'S BY ION SHOWER DOPING TECHNIQUE.

被引：0
|
作者：
Setsune, K. [1 ]
Miyauchi, M. [1 ]
Hirao, T. [1 ]
机构：
[1] Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn
来源：
Electron device letters | 1986年 / EDL-7卷 / 11期
关键词：
D O I：
10.1109/edl.1986.26494
中图分类号：
学科分类号：
摘要：
4
引用
收藏
页码：618 / 620
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