DIRECT DEPLETION CAPACITANCE MEASUREMENT TECHNIQUE TO DETERMINE THE DOPING PROFILE UNDER THE GATE OF A MOSFET.

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|
作者：
Wikstrom, J.A. [1 ]
Viswanathan, C.R. [1 ]
机构：
[1] Univ of California, Los Angeles, CA,, USA, Univ of California, Los Angeles, CA, USA
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 10期
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摘要：
11
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页码：2217 / 2219
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