共 50 条
- [41] Effect of Polysilicon Gate Doping Concentration Variation on MOSFET Characteristics 2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC), 2012,
- [42] Channel Doping Concentration Influence on BESOI MOSFET Light Sensor 2019 34TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2019), 2019,
- [43] The substrate doping density effect on submicron MOSFET's characteristics ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 297 - 301
- [45] An automated instrumentation for performance evaluation of MOSFET radiation sensors 2006 IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE PROCEEDINGS, VOLS 1-5, 2006, : 1326 - +
- [49] Damage profile examination on ion irradiated peek by 6Li doping and neutron depth profiling technique NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 141 (1-4): : 216 - 222
- [50] Damage profile examination on ion irradiated peek by 6Li doping and neutron depth profiling technique Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 141 (1-4): : 216 - 222