A hybrid CDAC-threshold configuring SAR ADC in 28nm FDSOI CMOS

被引:0
|
作者
Kilic, Mustafa [1 ]
Mavrogordatos, Themistoklis G. [2 ]
Leblebici, Yusuf [1 ]
机构
[1] Swiss Fed Inst Technol, Microelect Syst Lab, CH-1015 Lausanne, Switzerland
[2] Ctr Suisse Elect & Microtech, Zurich, Switzerland
关键词
SAR ADC; High speed ADC; Threshold configuring; Asynchronous logic; SINGLE-CHANNEL; SPEED; 6-BIT;
D O I
10.1007/s10470-018-1222-5
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a 9-bit 1.3 GS/s single channel SAR ADC is presented. In conventional SAR ADCs, the capacitive DAC size grows exponentially with respect to converter resolution. This results in both signal bandwidth and conversion speed reduction. The proposed architecture implements binary search through a redundant capacitive DAC for the 5 first MSBs and through programmable comparator thresholds for the remaining 4 LSBs. The DAC capacitance at the front-end remains small enough to achieve high sampling rate with increased input bandwidth. Two asynchronously clocked alternate comparators are used additionally to improve conversion speed. The ADC is designed and simulated in 28 nm FD-SOI CMOS. It consumes 4.1 mW from a 1 V supply, while achieving a SNDR of 52.1 dB and a Figure-of-Merit of 11.4 fJ/conversion-step.
引用
收藏
页码:397 / 404
页数:8
相关论文
共 50 条
  • [1] A hybrid CDAC-threshold configuring SAR ADC in 28nm FDSOI CMOS
    Mustafa Kilic
    Themistoklis G. Mavrogordatos
    Yusuf Leblebici
    Analog Integrated Circuits and Signal Processing, 2018, 97 : 397 - 404
  • [2] A Hybrid CDAC - Threshold Configuring SAR ADC in 28nm FDSOI CMOS
    Mavrogordatos, Themistoklis G.
    Kilic, Mustafa
    Leblebici, Yusuf
    2017 IEEE 15TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2017, : 213 - 216
  • [3] A Pipelined Speed Enhancement Technique for CDAC-Threshold Configuring SAR ADC
    Kilic, Mustafa
    Leblebici, Yusuf
    2018 16TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2018, : 273 - 276
  • [4] Integration of SPAD in 28nm FDSOI CMOS technology
    de Albuquerque, T. Chaves
    Calmon, F.
    Clerc, R.
    Pittet, P.
    Benhammou, Y.
    Golanski, D.
    Jouan, S.
    Rideau, D.
    Cathelin, A.
    2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2018, : 82 - 85
  • [5] ESD design challenges in 28nm Hybrid FDSOI/Bulk advanced CMOS process
    Dray, A.
    Guitard, N.
    Fonteneau, P.
    Golanski, D.
    Fenouillet-Beranger, C.
    Beckrich, H.
    Sithanandam, R.
    Benoist, T.
    Legrand, C-A.
    Galy, Ph
    2012 34TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD), 2012,
  • [6] A 7.69 ENOB, 161μW SAR ADC in 28nm CMOS for Proton Sound Detectors
    Turossi, Davide
    Vallicelli, Elia Arturo
    De Matteis, Marcello
    Di Meo, Gennaro
    D'Ottavi, Fabio
    Baschirotto, Andrea
    2024 19TH CONFERENCE ON PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PRIME 2024, 2024,
  • [7] A 9-bit 50MS/s Asynchronous SAR ADC in 28nm CMOS
    Cao, Tuan-Vu
    Aunet, Snorre
    Ytterdal, Trond
    2012 NORCHIP, 2012,
  • [8] A Background Calibrated 28GS/s 8b Interleaved SAR ADC in 28nm CMOS
    Le, M. Q.
    Gorecki, J.
    Riani, J.
    Pernillo, J.
    Tan, A.
    Gopalakrishnan, K.
    Helal, B.
    Khandelwal, P.
    Loi, C.
    Quek, I.
    Wong, P.
    Buchwald, A.
    2017 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2017,
  • [9] Scaling Perspectives of ULV Microcontroller Cores to 28nm UTBB FDSOI CMOS
    de Streel, Guerric
    Bol, David
    2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2013,
  • [10] An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology
    Lakeh, Mohammadreza Dolatpoor
    Kammerer, Jean-Baptiste
    Uhring, Wilfried
    Schell, Jean-Baptiste
    Calmon, Francis
    2020 IEEE SENSORS, 2020,