Recent advances in Quantum Dot material for microwave semiconductor lasers and amplifiers

被引：0

作者：

Dagens, B. ^{[1
]}

Lelarge, F. ^{[1
]}

Rousseau, B. ^{[1
]}

Accard, A. ^{[1
]}

Poingt, F. ^{[1
]}

Provost, J. G. ^{[1
]}

Make, D. ^{[1
]}

Le Gouezigou, O. ^{[1
]}

Landreau, J. ^{[1
]}

Pommereau, F. ^{[1
]}

Brenot, R. ^{[1
]}

Renaudier, J. ^{[1
]}

van Dijk, F. ^{[1
]}

Duan, G. -H. ^{[1
]}

机构：

[1] Alcatel Thales II V Lab, Route Dept 128, F-91767 Palaiseau, France

来源：

2006 INTERNATIONAL TOPICAL MEETING ON MICROWAVES PHOTONICS | 2006年

关键词：

microwave devices; quantum dots; semiconductor lasers; semiconductor optical amplifiers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum dot material offers new perspectives for the development of low-cost, high performing semiconductor laser and amplifiers. The 3D quantification of the energy levels in quantum dots leads to potentially high optical gain and efficiency, and thus the possibility of operation at lower currents than quantum well devices. Better resistance to temperature change, lower tinewidth enhancement factor and lower noise are also expected. The elaboration and the basic properties of the quantum dot material for laser and amplifiers will be first presented. Then the main device performance will be detailed, as well as the disruptive properties already obtained. Potentials for microwave photonic applications will be discussed.

引用

页码：187 / +

页数：2

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