Advances in self-assembled semiconductor quantum dot lasers

被引:31
|
作者
Henini, M [1 ]
Bugajski, M
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
关键词
quantum wells; quantum wires; quantum dots; lasers; molecular beam epitaxy; metalorganic vapour phase epitaxy;
D O I
10.1016/j.mejo.2005.04.017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:950 / 956
页数:7
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