Recent advances in semiconductor quantum-dot lasers

被引：25

作者：

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

COMPTES RENDUS PHYSIQUE | 2003年 / 4卷 / 06期

关键词：

quantum dot laser; inhomogeneous broadening; wavelength stabilisation; spectral gain; narrow linewidth; high power laser; self-assembled dots; multi-wavelength amplification;

D O I：

10.1016/S1631-0705(03)00075-6

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Within the last few years a breakthrough in the device performance of quantum dot lasers occurred and new application areas were opened. Recent advances in the understanding and realisation of quantum dot lasers are reviewed. To cite this article: (C) 2003 Academie des sciences. Published by Editions scientifiques et medicales Elsevier SAS. All rights reserved.

引用

页码：611 / 619

页数：9

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