Recent advances in quantum dot based lasers and amplifiers at 1.55μm

被引：0

作者：

Dagens, B. ^{[1
]}

Lelarge, F. ^{[1
]}

Accard, A. ^{[1
]}

Pornmereau, F. ^{[1
]}

Brenot, R. ^{[1
]}

Renaudier, J. ^{[1
]}

van Dijk, F. ^{[1
]}

Duan, G. -H. ^{[1
]}

机构：

[1] Alcatel Thales 3, Lab 5, Route Dept 128, F-91767 Palaiseau, France

来源：

WORKSHOP ON OPTICAL COMPONENTS FOR BROADBAND COMMUNICATION | 2006年 / 6350卷

关键词：

telecom; quantum dots; semiconductor lasers; semiconductor optical amplifiers; mode-locked laser; clock recovery;

D O I：

10.1117/12.692911

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Quantum dot (QD) materials offer attractive performances for the development of lasers and amplifiers at 1.55 mu m. The 3-D quantification of the energy levels in QD leads to several advantages, such as high optical gain and efficiency, low sensitivity to temperature variations, low noise and low linewidth enhancement factor. We shall present in this paper the growth and basic properties of QD materials for lasers and amplifiers, and device performances with particular interest for optical communications and microwave transmission.

引用

页数：8

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