Magnetic and structural properties of NdFeB thin film prepared by step annealing

被引:7
|
作者
Serrona, LKEB
Sugimura, A
Fujisaki, R
Okuda, T
Adachi, N
Ohsato, H
Sakamoto, I
Nakanishi, A
Motokawa, M
机构
[1] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Sumitomo Special Met Co, Osaka 6180013, Japan
[3] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
关键词
RF sputtering; anisotropic NdFeB thin film; vacuum annealing; high coercivity;
D O I
10.1016/S0921-5107(02)00401-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The crystallization of the amorphous phase into the tetragonal Nd2Fe14B (Phi) phase and the corresponding changes in magnetic properties have been examined by step annealing experiment using a 2 mum thick NdFeB film sample. Microstructural and magnetic analysis indicate that the film was magnetically soft as deposited with the coercivity H-ciperpendicular to < 16 kA m(-1) and the remnant magnetization 4piM(rperpendicular to) < 0.02 T. Annealing at a temperature of 550 degreesC, a coercivity value around 784 kA m(-1) was developed and diffraction analysis showed evidence of Phi phase 0021 peaks being aligned perpendicular to the film plane. At an optimum annealing temperature of 575 degreesC, the remnant magnetization of this anisotropic thin film is around 0.60 T with intrinsic coercivity of similar to 1340 kA m(-1). Annealing the film sample at 200 degreesC less than or equal to T-ann less than or equal to 750 degreesC showed variations in magnetic properties that were mostly due to the change in the perpendicular anisotropy. Based on 4piM(sperpendicular to) values plotted against T-ann, a dip in 4piM(sperpendicular to) values was observed as T-ann increased in the soft-to-hard magnetic characteristics transition region and rose as the hard crystalline phase started to form. The results show that the magnetic properties of the NdFeB film were slightly influenced by the presence of NdO, film surface roughening and the small increase in crystal size as a consequence of repeated heat treatment. At T-ann similar to 300 degreesC, the nominal saturation magnetization indicated a certain degree of weak perpendicular magnetic anisotropy in the film sample considered to be essential in the enhancement of coercivity in crystallized films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:59 / 63
页数:5
相关论文
共 50 条
  • [41] Influence of annealing on the magnetic properties of alternate deposited Co/Mo thin film
    Lin, C
    Chen, YG
    Liu, BX
    THIN SOLID FILMS, 1999, 338 (1-2) : 314 - 319
  • [42] Effect of Annealing Temperature on the Structural and Optical Properties of ZnO Thin Film Annealed with Novel Annealing Method
    Lee, Sihun
    Kim, Dongwan
    Leem, Jae-Young
    SCIENCE OF ADVANCED MATERIALS, 2021, 13 (06) : 1172 - 1177
  • [43] Effect of Annealing on the Magnetic Properties and Microstructure of NdFeB/Tb Multilayered Films
    Li, D. S.
    Suzuki, S.
    Liu, W. F.
    Horikawa, T.
    Machida, K.
    IUMRS-ICA 2008 SYMPOSIUM AA. RARE-EARTH RELATED MATERIAL PROCESSING AND FUNCTIONS, 2008, 1
  • [44] Effect of annealing temperature on the structural, optical, magnetic and electrochemical properties of NiO thin films prepared by sol–gel spin coating
    N. R. Aswathy
    Jiji Varghese
    R. Vinodkumar
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 16634 - 16648
  • [45] Effect of Annealing Temperature on the Structural and Magnetic Properties of Terbium Iron Garnet Thin Films Prepared by Sol-Gel Method
    Aldbea, Ftema W.
    Ibrahim, N. B.
    2ND INTERNATIONAL MULTIDISCIPLINARY MICROSCOPY AND MICROANALYSIS CONGRESS, 2015, 164 : 65 - 72
  • [46] Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing
    Cheng, Huang-Chung
    Huang, Chun-Yao
    Wang, Fang-Shing
    Lin, Kuen-Hsien
    Tarntair, Fu-Gow
    2000, JJAP, Tokyo (39):
  • [47] Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing
    Cheng, HC
    Huang, CY
    Wang, FS
    Lin, KH
    Tarntair, FG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (1AB): : L19 - L21
  • [48] Influences of annealing temperature on the optical properties of SiOx thin film prepared by reactive magnetron sputtering
    Huang, Feng
    Song, Qiuming
    Li, Ming
    Xie, Bin
    Wang, Haiqian
    Jiang, Yousong
    Song, Yizhou
    APPLIED SURFACE SCIENCE, 2008, 255 (05) : 2006 - 2011
  • [49] Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering
    Zhong, Wei
    Li, Guoyuan
    Lan, Linfeng
    Li, Bin
    Chen, Rongsheng
    RSC ADVANCES, 2018, 8 (61) : 34817 - 34822
  • [50] Effect of Annealing Time on the Properties of BLT Thin Film Prepared by Sol-Gel Technique
    Manglani, Vinika
    Agnihotri, Ashish
    PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 547 - +