Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

被引：2

作者：

Futatsuki, Takashi ^{[1
,2
]}

Oe, Taro ^{[2
]}

Aoki, Hidemitsu ^{[1
]}

Komatsu, Naoyoshi ^{[1
]}

Kimura, Chiharu ^{[1
]}

Sugino, Takashi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Organo Corp, Koto Ku, Tokyo 2290012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

TRANSPORT; SYSTEMS;

D O I：

10.1143/JJAP.49.04DF18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 degrees C) than that of conventional SiC thermal oxidation (1100 degrees C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H2O and O-2) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO2/SiC interface microroughness. The smooth SiO2/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs). (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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