Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

被引：2
|
作者：
Futatsuki, Takashi [1 ,2 ]
Oe, Taro [2 ]
Aoki, Hidemitsu [1 ]
Komatsu, Naoyoshi [1 ]
Kimura, Chiharu [1 ]
Sugino, Takashi [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] Organo Corp, Koto Ku, Tokyo 2290012, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
TRANSPORT; SYSTEMS;
D O I：
10.1143/JJAP.49.04DF18
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 degrees C) than that of conventional SiC thermal oxidation (1100 degrees C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H2O and O-2) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO2/SiC interface microroughness. The smooth SiO2/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs). (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures
    Onishi, Kentaro
    Nakanuma, Takato
    Tahara, Kosuke
    Kutsuki, Katsuhiro
    Shimura, Takayoshi
    Watanabe, Heiji
    Kobayashi, Takuma
    APPLIED PHYSICS EXPRESS, 2024, 17 (05)
  • [32] Role of oxygen and nitrogen at the SiO2/SiC interface
    RWTH Aachen, Aachen, Germany
    Microelectron Eng, 1-4 ([d]187-190):
  • [33] Chemical state of phosphorous at the SiC/SiO2 interface
    Pitthan, E.
    Amarasinghe, V. P.
    Xu, C.
    Gobbi, A. L.
    Dartora, G. H. S.
    Gustafsson, T.
    Feldman, L. C.
    Stedile, F. C.
    THIN SOLID FILMS, 2019, 675 : 172 - 176
  • [34] REACTIONS AT THE AL/SIO2/SIC LAYERED INTERFACE
    HUGHES, AE
    HEDGES, MM
    SEXTON, BA
    JOURNAL OF MATERIALS SCIENCE, 1990, 25 (11) : 4856 - 4865
  • [35] ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2/SIC INTERFACE
    BILLON, T
    BANO, E
    DICIOCCIO, L
    OUISSE, T
    LASSAGNE, P
    JAUSSAUD, C
    MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 193 - 196
  • [36] Passivation of Deep Levels at the SiO2/SiC Interface
    Basile, A. F.
    Rozen, J.
    Chen, X. D.
    Dhar, S.
    Williams, J. R.
    Feldman, L. C.
    Mooney, P. M.
    WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 11 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52), 2010, 28 (04): : 95 - 102
  • [37] Ion beam analysis of the SiO2/SiC interface
    Soares, G. V.
    Trombetta, F.
    Schutz, P.
    Baumvol, I. J. R.
    Radtke, C.
    Stedile, F. C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 : 444 - 446
  • [38] SiO2/SiC interface proved by positron annihilation
    Maekawa, A
    Kawasuso, A
    Yoshikawa, A
    Itoh, H
    APPLIED SURFACE SCIENCE, 2003, 216 (1-4) : 365 - 370
  • [39] The role of oxygen and nitrogen at the SiO2/SiC interface
    Golz, A
    Scharnholz, S
    Kurz, H
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 187 - 190
  • [40] Characterization of the SiO2/SiC Interface with Impedance Spectroscopy
    Sobas, Pawel A.
    Grossner, Ulrike
    Svensson, Bengt G.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 501 - 504
12345