Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

被引：2
|
作者：
Futatsuki, Takashi [1 ,2 ]
Oe, Taro [2 ]
Aoki, Hidemitsu [1 ]
Komatsu, Naoyoshi [1 ]
Kimura, Chiharu [1 ]
Sugino, Takashi [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] Organo Corp, Koto Ku, Tokyo 2290012, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
TRANSPORT; SYSTEMS;
D O I：
10.1143/JJAP.49.04DF18
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 degrees C) than that of conventional SiC thermal oxidation (1100 degrees C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H2O and O-2) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO2/SiC interface microroughness. The smooth SiO2/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs). (C) 2010 The Japan Society of Applied Physics
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Transition layers at the SiO2/SiC interface
    Zheleva, Tsvetanka
    Lelis, Aivars
    Duscher, Gerd
    Liu, Fude
    Levin, Igor
    Das, Mrinal
    APPLIED PHYSICS LETTERS, 2008, 93 (02)
  • [22] INTERFACE CHARACTERISTICS OF THERMAL SIO2 ON SIC
    KEE, RW
    GEIB, KM
    WILMSEN, CW
    FERRY, DK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1520 - 1523
  • [23] Electron transport at the SiC/SiO2 interface
    Ouisse, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 162 (01): : 339 - 368
  • [24] INP LOW-TEMPERATURE-DEPOSITED SIO2 INTERFACE
    GARDNER, PD
    NARAYAN, SY
    FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 186 - 201
  • [25] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
    Akiyama, Toru
    Hori, Shinsuke
    Nakamura, Kohji
    Ito, Tomonori
    Kageshima, Hiroyuki
    Uematsu, Masashi
    Shiraishi, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [26] Atomic-scale structure of SiO2/Si interface formed by furnace oxidation
    Miyata, N
    Watanabe, H
    Ichikawa, M
    PHYSICAL REVIEW B, 1998, 58 (20): : 13670 - 13676
  • [27] Interface properties of the Si(100)-SiO2 system formed by rapid thermal oxidation
    O'Sullivan, BJ
    Hurley, PK
    Mathewson, A
    Das, JH
    Daniel, AD
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 645 - 648
  • [28] Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics
    闫宏丽
    贾仁需
    汤晓燕
    宋庆文
    张玉明
    Journal of Semiconductors, 2014, (06) : 132 - 135
  • [29] Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics
    Yan Hongli
    Jia Renxu
    Tang Xiaoyan
    Song Qingwen
    Zhang Yuming
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (06)
  • [30] Passivation of SiO2/SiC Interface with La2O3 Capped Oxidation
    Munekiyo, S.
    Lei, Y. M.
    Natori, K.
    Iwai, H.
    Kawanago, T.
    Kakushima, K.
    Kataoka, K.
    Nishiyama, A.
    Sugii, N.
    Wakabayashi, H.
    Tsutsui, K.
    Furuhashi, M.
    Miura, N.
    Yamakawa, S.
    2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 113 - 115
12345