Very Smooth SiO2/SiC Interface Formed by Supercritical Water Oxidation at Low Temperature

被引：2
|
作者：
Futatsuki, Takashi [1 ,2 ]
Oe, Taro [2 ]
Aoki, Hidemitsu [1 ]
Komatsu, Naoyoshi [1 ]
Kimura, Chiharu [1 ]
Sugino, Takashi [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] Organo Corp, Koto Ku, Tokyo 2290012, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
TRANSPORT; SYSTEMS;
D O I：
10.1143/JJAP.49.04DF18
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have formed a SiO2 layer on a SiC surface by supercritical water (SCW) oxidation at a much lower temperature (400 degrees C) than that of conventional SiC thermal oxidation (1100 degrees C). This rapid oxidation at a low temperature is attributed to the high density of the oxidizers (H2O and O-2) under a high-pressure condition. We also revealed that SCW oxidation under suitable conditions suppresses the formation of SiO2/SiC interface microroughness. The smooth SiO2/SiC interface obtained by this low-temperature oxidation process is expected to contribute to improving the mobility performance of future SiC field-effect transistors (FETs). (C) 2010 The Japan Society of Applied Physics
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页数：5
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